| Abstract: |
This empirical study investigates the effect of laser light scattering on the optical properties of semiconductor materials through controlled laboratory experiments. Semiconductor materials including silicon (Si), gallium arsenide (GaAs), and indium phosphide (InP) were subjected to laser irradiation at varying wavelengths (405 nm, 532 nm, 650 nm) and power densities (50-500 mW/cm²). The optical properties including refractive index, absorption coefficient, bandgap energy, and transmittance were measured using spectrophotometry and ellipsometry techniques. Results demonstrate significant correlation between laser light scattering intensity and modifications in semiconductor optical characteristics. Refractive index showed nonlinear variation with incident laser power, particularly at shorter wavelengths [1]. Band gap energy decreased by 0.15-0.32 eV with increased laser exposure, indicating structural modifications at the material surface. The absorption coefficient exhibited exponential increase with laser power density, with maximum changes observed in InP samples (approximately 45% increase at 500 mW/cm²). These findings establish quantitative relationships between laser irradiation parameters and optical property modifications, providing fundamental insights for applications in laser-based material engineering, photonic device fabrication, and optical sensors. |
